2SK2985
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (U−MOSII)
2SK2985
DC−DC Converter, Relay Drive and Motor Drive Applications
Unit: mm
l Low drain−source ON resistance : RDS (ON) = 4.
5 mΩ (typ.
) l High forward transfer admittance : |Yfs| = 70 S (typ.
) l Low leakage current : IDSS = 100 µA (max) (VDS = 60 V) l Enhancement−mode : Vth = 1.
3~2.
5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel te...