Part Number
|
2SK3025 |
Manufacturer
|
Panasonic Semiconductor |
Description
|
Silicon N-channel power MOS FET |
Published
|
Mar 30, 2005 |
Detailed Description
|
Power F-MOS FETs
2SK3025 (Tentative)
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guarantee...
|
Datasheet
|
2SK3025
|
Overview
Power F-MOS FETs
2SK3025 (Tentative)
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
7.
3±0.
1 1.
8±0.
1
unit: mm
6.
5±0.
1 5.
3±0.
1 4.
35±0.
1 2.
3±0.
1 0.
5±0.
1
s Applications
2.
5±0.
1
0.
8max
0.
93±0.
1
1.
0±0.
1 0.
1±0.
05 0.
5±0.
1
s Absolute Maximum Ratings (TC = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 60 ±20 ±3...
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