Part Number
|
2SK3045 |
Manufacturer
|
Panasonic Semiconductor |
Description
|
Silicon N-Channel Power F-MOS FET |
Published
|
Mar 30, 2005 |
Detailed Description
|
Power F-MOS FETs
2SK3045
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS 15....
|
Datasheet
|
2SK3045
|
Overview
Power F-MOS FETs
2SK3045
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS 15.
6mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown
unit: mm
9.
9±0.
3 4.
6±0.
2 2.
9±0.
2
s Applications
q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
15.
0±0.
5
φ3.
2±0.
1
13.
7±0.
2 4.
2±0.
2
1.
4±0.
2 1.
6±0.
2 0.
8±0.
1
3.
0±0.
5
2.
6±0.
1
0.
55±0.
15
s Absolute Maximum Ratings (TC = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 500 ±30 ±2.
5 ±10 15.
6 30 2 150 −55 to +150 Un...
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