DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK3055
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER 2SK3055 PACKAGE Isolated TO-220
DESCRIPTION
This product is N-Channel MOS Field Effect
Transistor designed for high current switching applications.
FEATURES
• Low On-State Resistance RDS(on)1 = 34 mΩ MAX.
(VGS = 10 V, ID = 15 A) RDS(on)2 = 50 mΩ MAX.
(VGS = 4.
0 V, ID = 15 A) • Low Ciss : Ciss = 920 pF TYP.
• Built-in Gate Protection Diode • Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage Gate to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse)
Note1
VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT ...