2SK3065
Transistors
Small switching (60V, 2A)
2SK3065
!Features 1) Low on resistance.
2) High-speed switching.
3) Optimum for a pocket resource etc.
because of undervoltage actuation (2.
5V actuation).
4) Driving circuit is easy.
5) Easy to use parallel.
6) It is strong to an electrostatic discharge.
!Structure Silicon N-channel MOS FET
transistor !External dimensions (Units : mm)
0.
2 4.
5+ −0.
1 1.
6±0.
1 1.
5±0.
1
+0.
5 4.
0− 0.
3 2.
5+0.
2 −0.
1
0.
5±0.
1
(1)
(2)
(3) 0.
4±0.
1 1.
5±0.
1
1.
0±0.
3
0.
1 0.
4+ −0.
05
0.
4±0.
1 1.
5±0.
1
0.
5±0.
1 3.
0±0.
2
ROHM : MPT3 E I A J : SC-62
Abbreviated symbol : KE
(1) Gate (2) Drain (3) Source
!Absolute maximum ratings (Ta = 25°C)
Parameter Drain-source voltage Gate...