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Part Number
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2SK3076 |
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Manufacturer
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Hitachi Semiconductor |
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Description
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N-Channel MOSFET |
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Published
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Mar 30, 2005 |
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Detailed Description
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2SK3076(L),2SK3076(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-656 (Z) 1st. Edition Jun 1998 Featur...
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Datasheet
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2SK3076
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Overview
2SK3076(L),2SK3076(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-656 (Z) 1st.
Edition Jun 1998 Features
• • • • Low on-resistance High speed switching Low drive current.
Built-in fast recovery diode (trr=120 ns)
Outline
LDPAK
4 4
D
1 G 1 2 3
2
3
S
1.
Gate 2.
Drain 3.
Source 4.
Drain
2SK3076(L),2SK3076(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)
Note1
Ratings 500 ±30 7 28 7
Unit V V A A A W °C °C
Body-drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: 1.
PW ≤ 10µs, duty cycle ≤ 1 % 2.
Value at Tc = 2...
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