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2SK3082

N-Channel MOSFET

Description

2SK3082(L),2SK3082(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-637 (Z) 2nd. Edition May 1998 Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 1 1 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK3082(L),2SK3082(S) Absolute Maximum Ratings...


Hitachi Semiconductor

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