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Part Number
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2SK3082S |
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Manufacturer
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Hitachi Semiconductor |
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Description
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N-Channel MOSFET |
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Published
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Mar 30, 2005 |
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Detailed Description
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2SK3082(L),2SK3082(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-637 (Z) 2nd. Edition May 1998 Featur...
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Datasheet
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2SK3082S
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Overview
2SK3082(L),2SK3082(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-637 (Z) 2nd.
Edition May 1998 Features • Low on-resistance RDS(on) = 0.
055 Ω typ.
• High speed switching • 4V gate drive device can be driven from 5V source Outline
LDPAK
4 4
1 1
2
3
2
3
1.
Gate 2.
Drain 3.
Source 4.
Drain
2SK3082(L),2SK3082(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)
Note1
Ratings 60 ±20 10 40 10
Unit V V A A A A mJ W °C °C
Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP
...
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