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2SK3082S

Hitachi Semiconductor
Part Number 2SK3082S
Manufacturer Hitachi Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK3082(L),2SK3082(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-637 (Z) 2nd. Edition May 1998 Featur...
Datasheet PDF File 2SK3082S PDF File

2SK3082S
2SK3082S

Overview
2SK3082(L),2SK3082(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-637 (Z) 2nd.
Edition May 1998 Features • Low on-resistance RDS(on) = 0.
055 Ω typ.
• High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 1 1 2 3 2 3 1.
Gate 2.
Drain 3.
Source 4.
Drain 2SK3082(L),2SK3082(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings 60 ±20 10 40 10 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP ...


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