2SK3147(L),2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-731 (Z) 1st.
Edition February 1999 Features • Low on-resistance R DS = 0.
1 Ω typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source Outline DPAK–2 4 4 D 2 1 2 G 1 3 3 S 1 2 3 1.
Gate 2.
Drain 3.
Source 4.
Drain 2SK3147(L),2SK3147(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 100 ±20 5 2...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)