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2SK3147

Renesas
Part Number 2SK3147
Manufacturer Renesas
Description Silicon N-Channel Power MOSFET
Published Jan 19, 2020
Detailed Description Data Sheet 2SK3147(L), 2SK3147(S) 100V, 5A, 0.13Ωmax. Silicon N Channel Power MOS FET High Speed Power Switching R07DS...
Datasheet PDF File 2SK3147 PDF File

2SK3147
2SK3147

Overview
Data Sheet 2SK3147(L), 2SK3147(S) 100V, 5A, 0.
13Ωmax.
Silicon N Channel Power MOS FET High Speed Power Switching R07DS1254EJ0400 (Previous: REJ03G1072-0300) Rev.
4.
00 Mar 25, 2015 Features  Low on-resistance RDS = 0.
1  typ.
 High speed switching  4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2)) 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S)) 4 12 3 G D 1.
Gate 2.
Drain 3.
Source 4.
Drain 1 23 S Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW  10 s, duty cycle  1 % 2.
Value at Tc = 25°C 3.
Value at Tch = 25°C, Rg  50  Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note3 EAR Note3 Pch Note2 Tch Tstg Ratings 100 20 5 20 5 5 2.
5 20 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C °C R07DS1254EJ0400 Rev.
4.
00 Mar 25, 2015 Page 1 of 8 2SK3147(L), 2SK3147(S) Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 4.
Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 100 20 — — 1.
0 — — 3.
5 — — — — — — — — — Typ — — — — — 0.
1 0.
13 6 420 185 100 10 35 110 60 0.
85 85 Max — — 10 10 2.
5 0.
13 0.
17 — — — — — — — — — — Unit V V A A V   S pF pF pF ns ns ns ns V ns (Ta = 25°C) Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 100 V, VGS = 0 ID = 1...


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