Silicon Junction FETs (Small Signal) 2SK374 Silicon N-Channel Junction FET For low-frequency amplification For switching 0.
65±0.
15 +0.
2 unit: mm 0.
65±0.
15 2.
8 –0.
3 1.
5 –0.
05 +0.
25 s Features q Low noise-figure (NF) q High gate to drain voltage VGDO q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
0.
95 2.
9 –0.
05 1 1.
9±0.
2 +0.
2 0.
95 3 0.
4 –0.
05 +0.
1 2 1.
45 Drain to Source voltage Gate to Drain voltage Gate to Source voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature VDSX VGDO VGSO ID IG PD Tch Tstg 55 −55 −55 30 10 200 150 −55 to +150 V V V mA mA mW °C °C 1: Sour...

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