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Part Number
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2SK614 |
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Manufacturer
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Panasonic Semiconductor |
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Description
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N-Channel MOSFET |
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Published
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Mar 30, 2005 |
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Detailed Description
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Silicon MOS FETs (Small Signal)
2SK614
Silicon N-Channel MOS FET
For switching
unit: mm
5.0±0.2
5.1±0.2
4.0±0.2
s Fea...
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Datasheet
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2SK614
|
Overview
Silicon MOS FETs (Small Signal)
2SK614
Silicon N-Channel MOS FET
For switching
unit: mm
5.
0±0.
2
5.
1±0.
2
4.
0±0.
2
s Features
q Low ON-resistance RDS(on) q High-speed switching q Allowing to be driven directly by CMOS and TTL
13.
5±0.
5
s Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings 80 20 ±0.
5 ±1 750 150 −55 to +150 Unit V V A
0.
45 –0.
1
+0.
2
0.
45 –0.
1
+0.
2
1.
27
1.
27
1 2 3
2.
54±0.
15
A mW °C °C
s Electrical Characteristics (Ta = 25°C)
Parameter Drain to Source cut-off current Gate to Source leak...
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