FDB035AN06A0 July 2002 FDB035AN06A0 N-Channel PowerTrench® MOSFET 60V, 80A, 3.
5mΩ Features • r DS(ON) = 3.
2mΩ (Typ.
), V GS = 10V, ID = 80A • Qg(tot) = 95nC (Typ.
), VGS = 10V • Low Miller Charge • Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82584 Applications • Motor / Body Load Control • ABS Systems • Powertrain Management • Injection Systems • DC-DC converters and Off-line UPS • Distributed Power Architectures and VRMs • Primary Switch for 12V and 24V systems D GATE G SOURCE TO-263AB FDB SERIES DRAIN (FLANGE) S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Sour...

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