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FDB035AN06A0

ON Semiconductor
Part Number FDB035AN06A0
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Sep 3, 2020
Detailed Description FDB035AN06A0 — N-Channel PowerTrench® MOSFET FDB035AN06A0 N-Channel PowerTrench® MOSFET 60 V, 80 A, 3.5 mΩ Features •...
Datasheet PDF File FDB035AN06A0 PDF File

FDB035AN06A0
FDB035AN06A0

Overview
FDB035AN06A0 — N-Channel PowerTrench® MOSFET FDB035AN06A0 N-Channel PowerTrench® MOSFET 60 V, 80 A, 3.
5 mΩ Features • RDS(on) = 3.
2 mΩ ( Typ.
) @ VGS = 10 V, ID = 80 A Applications • QG(tot) = 95 nC ( Typ.
) @ VGS = 10 V • Synchronous Rectification for ATX / Server / Telecom PSU • Low Miller Charge • Battery Protection Circuit • Low Qrr Body Diode • Motor drives and Uninterruptible Power Supplies • UIS Capability (Single Pulse and Repetitive Pulse) Formerly developmental type 82584 D D G S D2-PAK G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC < 153oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W) Pulsed EAS Single Pulse Avalanche Energy (Note 1) Power dissipation PD Derate above 25oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
(Note 2) Thermal Resistance, Junction to Ambient, 1in2 copper pad area, Max.
FDB035AN06A0 60 ±20 80 22 Figure 4 625 310 2.
07 -55 to 175 Unit V V A A A mJ W W/oC oC 0.
48 62 43 oC/W oC/W oC/W ©2002 Semiconductor Components Industries, LLC.
September-2017,Rev.
3 Publication Order Number: FDB035AN06A0/D FDB035AN06A0 — N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Device Marking FDB035AN06A0 Device FDB035AN06A0 Package D2-PAK Reel Size 330 mm Tape Width 24 mm Quantity 800 units Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 50V VGS = 0V TC = 150oC VGS = ±20V On Characteristics VGS(TH) Gate to Source Threshold Voltage rDS(ON) Drain to Source On Resistance VGS = VDS, ID = 250µA ID = 80A, VGS = 10V ID = ...


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