FDC645N April 2001 FDC645N N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Applications • DC/DC converter Features • 5.
5 A, 30 V.
RDS(ON) = 30 mΩ @ VGS = 4.
5 V RDS(ON) = 26 mΩ @ VGS = 10 V • High performance trench technology for extremely low RDS(ON) • Low gate charge (13 nC typical) • High power and current handling capability S D D SuperSOT TM-6 G D D 1 6 2 5 3 4 Absolute Maximum Ratings TA=25oC unless otherwise noted...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)