FDFS2P102
October 2000
FDFS2P102
Integrated P-Channel MOSFET and
Schottky Diode
General Description
The FDFS2P102 combines the exceptional performance of Fairchild's high cell density MOSFET with a very low forward voltage drop
Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package solution for DC to DC converters.
It features a fast switching, low gate charge MOSFET with very low on-state resistance.
The independently connected
Schottky diode allows its use in a variety of DC/DC converter topologies.
Features • •
–3.
3 A, –20 V.
RDS(ON) = 0.
125 Ω @ VGS = –10 V RDS(ON) = 0.
200 Ω @ VGS = –4.
5 V.
VF 0.
39 V @ 1 A (TJ = 125 oC).
VF 0.
47 V @...