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FDFS2P102

Fairchild Semiconductor
Part Number FDFS2P102
Manufacturer Fairchild Semiconductor
Description Integrated P-Channel MOSFET and Schottky Diode
Published Mar 30, 2005
Detailed Description FDFS2P102 October 2000 FDFS2P102 Integrated P-Channel MOSFET and Schottky Diode General Description The FDFS2P102 comb...
Datasheet PDF File FDFS2P102 PDF File

FDFS2P102
FDFS2P102

Overview
FDFS2P102 October 2000 FDFS2P102 Integrated P-Channel MOSFET and Schottky Diode General Description The FDFS2P102 combines the exceptional performance of Fairchild's high cell density MOSFET with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package solution for DC to DC converters.
It features a fast switching, low gate charge MOSFET with very low on-state resistance.
The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.
Features • • –3.
3 A, –20 V.
RDS(ON) = 0.
125 Ω @ VGS = –10 V RDS(ON) = 0.
200 Ω @ VGS = –4.
5 V.
VF < 0.
39 V @ 1 A (TJ = 125 oC).
VF < 0.
47 V @...


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