FDG6318PZ
January 2003
FDG6318PZ
Dual P-Channel, Digital FET
General Description
These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s especially tailored to minimize on-state resistance.
This device has been designed especially for bipolar digital
transistors and small signal MOSFETS
Features
• -0.
5A, -20V.
r DS(ON) = 780mΩ (Max)@ VGS = -4.
5 V rDS(ON) = 1200mΩ (Max) @ V GS = -2.
5 V
• Very low level gate drive requirements allowing direct operation in 3V circuits (V GS(TH) 1.
5V).
• Gate-Source Zener for ESD ruggedness (1.
4kV Human Body Model).
• Compact industry standard SC-70-6 surface mount package.
Applications
• Battery management
...