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FDG6318P

Part Number	FDG6318P
Manufacturer	Fairchild Semiconductor
Description	Dual P-Channel/ Digital FET
Published	Mar 30, 2005
Detailed Description	FDG6318P January 2003 FDG6318P Dual P-Channel, Digital FET General Description These dual P-Channel logic level enhanc...
Datasheet	FDG6318P PDF File

Overview

FDG6318P January 2003 FDG6318P Dual P-Channel, Digital FET General Description These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance.
This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS.
Features • –0.
5 A, –20 V.
RDS(ON) = 780 mΩ @ VGS = –4.
5 V RDS(ON) = 1200 mΩ @ VGS = –2.
5 V • Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.
5V).
• Compact industry standard SC70-6 surface mount package Applications • Battery ma...

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