FDG6335N
October 2001
FDG6335N
20V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized use in small switching
regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package.
Features
• 0.
7 A, 20 V.
RDS(ON) = 300 mΩ @ VGS = 4.
5 V RDS(ON) = 400 mΩ @ VGS = 2.
5 V • Low gate charge (1.
1 nC typical) • High performance trench technology for extremely low RDS(ON) • Compact industry standard SC70-6 surface mount package
Applications
• DC/DC converter • Power management • Loadswitch...