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FDG6332C


Part Number FDG6332C
Manufacturer ON Semiconductor
Title Dual-Channel MOSFET
Description The N & P−Channel MOSFETs are produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance...
Features
• Q1 0.7 A, 20 V ♦ RDS(ON) =300 mW @ VGS = 4.5 V ♦ RDS(ON) = 400 mW @ VGS = 2.5 V
• Q2 −0.6 A, −20 V ♦ RDS(ON) = 420 mW @ VGS = −4.5 V ♦ RDS(ON) = 630 mW @ VGS = −2.5 V
• Low Gate Charge
• High Performance Trench Technology for Extremely Low RDS(ON)
• SC70−6 Package: Small Footprint (51% Smaller tha...

File Size 251.97KB
Datasheet FDG6332C PDF File








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FDG6332C : The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical. Features • Q1 0.7 A, 20V. RDS(ON) = 300 mΩ @ VGS = 4.5 V RDS(ON) = 400 mΩ @ VGS = 2.5 V • Q2 –0.6 A, –20V. RDS(ON) = 420 mΩ @ VGS = –4.5 V RDS(ON) = 630 mΩ @ VGS = –2.5 V • Low gate charge • High performance trench technology for extremely low RDS(ON) • SC70-6 package: small footprint (51% s.




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