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FDG6332C

ON Semiconductor
Part Number FDG6332C
Manufacturer ON Semiconductor
Description Dual-Channel MOSFET
Published Dec 24, 2023
Detailed Description DATA SHEET www.onsemi.com MOSFET– N & P-Channel, POWERTRENCH) 20 V FDG6332C General Description The N & P−Channel MOSFE...
Datasheet PDF File FDG6332C PDF File

FDG6332C
FDG6332C

Overview
DATA SHEET www.
onsemi.
com MOSFET– N & P-Channel, POWERTRENCH) 20 V FDG6332C General Description The N & P−Channel MOSFETs are produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP−8 and SSOP−6 packages are impractical.
Features • Q1 0.
7 A, 20 V ♦ RDS(ON) =300 mW @ VGS = 4.
5 V ♦ RDS(ON) = 400 mW @ VGS = 2.
5 V • Q2 −0.
6 A, −20 V ♦ RDS(ON) = 420 mW @ VGS = −4.
5 V ♦ RDS(ON) = 630 mW @ VGS = −2.
5 V • Low Gate Charge • High Performance ...


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