Part Number
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FDM3300NZ |
Manufacturer
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Fairchild Semiconductor |
Description
|
N-Channel MOSFET |
Published
|
Mar 30, 2005 |
Detailed Description
|
FDM3300NZ
February 2003
FDM3300NZ
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
General Descr...
|
Datasheet
|
FDM3300NZ
|
Overview
FDM3300NZ
February 2003
FDM3300NZ
Monolithic Common Drain N-Channel 2.
5V Specified PowerTrench MOSFET
General Description
This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.
5v on special MicroFET lead frame with all the drains on one side of the package.
Features
• 10 A, 20 V RDS(ON) = 23 mΩ @ VGS = 4.
5 V RDS(ON) = 28 mΩ @ VGS = 2.
5 V • 2000v ESD Protection • Low Profile – 1mm maximum – in the new package MicroFET 3.
3x3.
3 mm
Applications
• Li-Ion Battery Pack
D1
D1
D2
D2 D2
1 2
G2
8 7 6 5
3 4
S1
G1
S2
MicroFET Absolute Maximum Ratings
VDSS VGSS ID PD TJ, TSTG
TA=25oC unless otherwise...
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