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FDM3300NZ

Part Number	FDM3300NZ
Manufacturer	Fairchild Semiconductor
Description	N-Channel MOSFET
Published	Mar 30, 2005
Detailed Description	FDM3300NZ February 2003 FDM3300NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET General Descr...
Datasheet	FDM3300NZ PDF File

Overview

FDM3300NZ February 2003 FDM3300NZ Monolithic Common Drain N-Channel 2.
5V Specified PowerTrench MOSFET General Description This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.
5v on special MicroFET lead frame with all the drains on one side of the package.
Features • 10 A, 20 V RDS(ON) = 23 mΩ @ VGS = 4.
5 V RDS(ON) = 28 mΩ @ VGS = 2.
5 V • > 2000v ESD Protection • Low Profile – 1mm maximum – in the new package MicroFET 3.
3x3.
3 mm Applications • Li-Ion Battery Pack D1 D1 D2 D2 D2 1 2 G2 8 7 6 5 3 4 S1 G1 S2 MicroFET Absolute Maximum Ratings VDSS VGSS ID PD TJ, TSTG TA=25oC unless otherwise...

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FDM3300NZ N-Channel MOSFET - Fairchild Semiconductor

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