Part Number
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FDN308P |
Manufacturer
|
Fairchild Semiconductor |
Description
|
P-Channel MOSFET |
Published
|
Mar 30, 2005 |
Detailed Description
|
FDN308P
February 2001
FDN308P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V spe...
|
Datasheet
|
FDN308P
|
Overview
FDN308P
February 2001
FDN308P
P-Channel 2.
5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.
5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process.
It has been optimized for power management applications with a wide range of gate drive voltage (2.
5V – 12V).
Features
• –20 V, –1.
5 A.
RDS(ON) = 125 mΩ @ VGS = –4.
5 V RDS(ON) = 190 mΩ @ VGS = –2.
5 V
• Fast switching speed • High performance trench technology for extremely low RDS(ON) • SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint
Applications
• Power management • Load switch • Battery protection
D
D
S
G S
SuperSOT -3
...
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