DatasheetsPDF.com

FDN302P

Fairchild Semiconductor
Part Number FDN302P
Manufacturer Fairchild Semiconductor
Description P-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDN302P October 2000 FDN302P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V spec...
Datasheet PDF File FDN302P PDF File

FDN302P
FDN302P

Overview
FDN302P October 2000 FDN302P P-Channel 2.
5V Specified PowerTrench MOSFET General Description This P-Channel 2.
5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process.
It has been optimized for power management applications with a wide range of gate drive voltage (2.
5V – 12V).
Features • –20 V, –2.
4 A.
RDS(ON) = 0.
055 Ω @ VGS = –4.
5 V RDS(ON) = 0.
080 Ω @ VGS = –2.
5 V • Fast switching speed • High performance trench technology for extremely low RDS(ON) • SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint Applications • Power management • Load switch • Battery protection D D S G S SuperSOT -3 ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)