Part Number
|
FDR8305N |
Manufacturer
|
Fairchild Semiconductor |
Description
|
N-Channel MOSFET |
Published
|
Mar 30, 2005 |
Detailed Description
|
FD8305N
November 1999
FDR8305N
Dual N-Channel 2.5V Specified PowerTrench MOSFET
General Description
These N-Channel 2...
|
Datasheet
|
FDR8305N
|
Overview
FD8305N
November 1999
FDR8305N
Dual N-Channel 2.
5V Specified PowerTrench MOSFET
General Description
These N-Channel 2.
5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features •
4.
5 A, 20 V.
RDS(ON) = 0.
022 Ω @ VGS = 4.
5 V RDS(ON) = 0.
028 Ω @ VGS = 2.
5 V.
• • • •
Low gate charge (16.
2nC typical).
Fast switching speed.
High performance trench technology for extremely low RDS(ON).
Small footprint (38% smaller than a standard SO-8);low profile package (1 mm thick); power handling capability similar to SO-8.
...
Similar Datasheet