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FDR8305N

Fairchild Semiconductor
Part Number FDR8305N
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description FD8305N November 1999 FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description These N-Channel 2...
Datasheet PDF File FDR8305N PDF File

FDR8305N
FDR8305N

Overview
FD8305N November 1999 FDR8305N Dual N-Channel 2.
5V Specified PowerTrench MOSFET General Description These N-Channel 2.
5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features • 4.
5 A, 20 V.
RDS(ON) = 0.
022 Ω @ VGS = 4.
5 V RDS(ON) = 0.
028 Ω @ VGS = 2.
5 V.
• • • • Low gate charge (16.
2nC typical).
Fast switching speed.
High performance trench technology for extremely low RDS(ON).
Small footprint (38% smaller than a standard SO-8);low profile package (1 mm thick); power handling capability similar to SO-8.
...


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