FDR836P
April 1999
FDR836P
P-Channel 2.
5V Specified MOSFET
General Description
SuperSOTTM -8 P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as battery powered circuits or portable electronics where low in-line power loss, fast switching and resistance to transients are needed.
Features •
-6.
1 A, -20 V.
RDS(ON) = 0.
030 W @ VGS = -4.
5 V RDS(ON) = 0.
040 W @ VGS = -2.
5 V
• •
High density cell design for...