Part Number
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FDR838P |
Manufacturer
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Fairchild Semiconductor |
Description
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P-Channel MOSFET |
Published
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Mar 30, 2005 |
Detailed Description
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FDR838P
March 1999
FDR838P
P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
These P-Channel 2.5V spec...
|
Datasheet
|
FDR838P
|
Overview
FDR838P
March 1999
FDR838P
P-Channel 2.
5V Specified PowerTrenchTM MOSFET
General Description
These P-Channel 2.
5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features • • • • •
-8 A, -20 V.
RDS(ON) = 0.
017 Ω @ VGS = -4.
5 V RDS(ON) = 0.
024 Ω @ VGS = -2.
5 V Low gate charge (30nC typical).
Fast switching speed.
High performance trench technology for extremely low RDS(ON).
Small footprint (38% smaller than a standard SO-8); low profile package (1 mm thick); power handling capability similar to SO-8.
Applicat...
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