FDS3812 May 2001 FDS3812 80V N-Channel Dual PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features 3.
4 A, 80 V.
RDS(ON) = 74 mΩ @ VGS = 10 V RDS(ON) = 84 mΩ @ VGS = 6 V • Fast switching speed • Low gate charge (13nC typ) • High performance trench technolog...

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