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FDS3890 Datasheet PDF


Part Number FDS3890
Manufacturer ON Semiconductor
Title Dual N-Channel MOSFET
Description ...
Features ...

File Size 224.89KB
Datasheet FDS3890 PDF File








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FDS3512 : This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 4.0 A, 80 V RDS(ON) = 70 mΩ @ VGS = 10 V RDS(ON) = 80 mΩ @ VGS = 6 V • Low gate charge (13nC Typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability D D D .

FDS3512 : This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features • 4.0 A, 80 V RDS(ON) = 70 mΩ @ VGS = 10 V RDS(ON) = 80 mΩ @ VGS = 6 V • Low gate charge (13nC Typical) These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability D D.

FDS3570 : This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency. Features • • • • 9 A, 80 V. RDS(ON) = 0.019 Ω @ VGS = 10 V RDS(ON) = 0.022 Ω @ VGS = 6 V. Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. D D D D 5 6 7 4 3 2 1 SO-8 Symbol VDSS VGSS ID PD S S S G 8 Absolute Maximum Ratings Drain-.

FDS3572 : FDS3572 November 2003 FDS3572 N-Channel PowerTrench® MOSFET 80V, 8.9A, 16mΩ Features • rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 8.9A • Qg(tot) = 31nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • Optimized efficiency at high frequencies • UIS Capability (Single Pulse and Repetitive Pulse) Applications • Primary switch for Isolated DC/DC converters • Distributed Power and Intermediate Bus Architectures • High Voltage Synchronous Rectifier for DC Bus Converters Formerly developmental type 82663 Branding Dash 5 5 4 3 2 1 6 7 1 2 3 4 8 SO-8 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Dra.

FDS3572 : MOSFET – N-Channel, POWERTRENCH) 80 V, 8.9 A, 16 mW FDS3572 Features • RDS(ON) = 14 W (Typ.), VGS = 10 V, ID = 8.9 A • Qg(tot) = 31 nC (Typ.), VGS = 10 V • Low Miller Charge • Low QRR Body Diode • Optimized Efficiency at High Frequencies • UIS Capability (Single Pulse and Repetitive Pulse) • This Device is Pb−Free and Halide Free Applications • Primary Switch for Isolated DC−DC Converters • Distributed Power and Intermediate Bus Architectures • High Voltage Synchronous Rectifier for DC Bus Converters ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted.) Symbol Parameter Ratings Unit VDSS Drain to Source Voltage 80 V VGS Gate to Source Voltage ±20 V ID Drain Current A C.

FDS3580 : This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 7.6 A, 80 V. RDS(ON) = 0.027 Ω @ VGS = 10 V RDS(ON) = 0.031 Ω @ VGS = 6 V. • • • • Low gate charge (34nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capabilit.

FDS3580 : This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC−DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC−DC power supply designs with higher overall efficiency. Features  7.6 A, 80 V:  RDS(ON) = 0.029 W @ VGS = 10 V  RDS(ON) = 0.033 W @ VGS = 6 V  Low Gate Charge (34 nC Typical)  Fast Switching Speed  High Performance Trench Technology for Extremely Low RDS(ON)  High Power and Current Handling Capability .

FDS3590 : This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 6.5 A, 80 V RDS(ON) = 39 mΩ @ VGS = 10 V RDS(ON) = 44 mΩ @ VGS = 6 V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability D D D D SO-8 G S.

FDS3601 : These N-Channel MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 1.3 A, 100 V. RDS(ON) = 480 mΩ @ VGS = 10 V RDS(ON) = 530 mΩ @ VGS = 6 V • Fast switching speed • Low gate charge (3.7nC typical) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability .

FDS3612 : This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 3.4 A, 100 V. RDS(ON) = 120 mΩ @ VGS = 10 V RDS(ON) = 130 mΩ @ VGS = 6 V • Fast switching speed • Low gate charge (14 nC typ) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability Applica.

FDS3670 : This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 6.3 A, 100 V. RDS(ON) = 0.030 Ω @ VGS = 10 V RDS(ON) = 0.033 Ω @ VGS = 6 V. • Low gate charge (57 nC typical). • Fast switching speed • High performance trench technology for extremely low RDS(ON) . • High power and current handling capabilit.

FDS3672 : FDS3672 March 2003 FDS3672 N-Channel PowerTrench® MOSFET 100V, 7.5A, 22mΩ Features • r DS(ON) = 19mΩ (Typ.), VGS = 10V, ID = 7.5A • Qg(tot) = 28nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • Optimized efficiency at high frequencies • UIS Capability (Single Pulse and Repetitive Pulse) Applications • DC/DC converters and Off-Line UPS • Distributed Power Architectures and VRMs • Primary Switch for 24V and 48V Systems • High Voltage Synchronous Rectifier • Direct Injection / Diesel Injection Systems • 42V Automotive Load Control Formerly developmental type 82763 • Electronic Valve Train Systems Branding Dash 5 5 4 3 2 1 6 7 1 2 3 4 8 SO-8 MOSFET Maximum Ratings TA =.

FDS3672 : MOSFET – N-Channel, POWERTRENCH) 100 V, 7.5 A, 22 mW FDS3672 Features • rDS(ON) = 19 mW (Typ.), VGS = 10 V, ID = 7.5 A • Qg(tot) = 28 nC (Typ.), VGS = 10 V • Low Miller Charge • Low QRR Body Diode • Optimized Efficiency at High Frequencies • UIS Capability (Single Pulse and Repetitive Pulse) • Pb−Free and Halide Free Applications • DC−DC Converters and Off−Line UPS • Distributed Power Architecture and VRMs • Primary Switch for 24 V and 48 V Systems • High Voltage Synchronous Rectifier MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted.) Symbol Parameter Ratings Unit VDSS Drain to Source Voltage 100 V VGS Gate to Source Voltage ±20 V ID Drain Current A Continuous (TA = 25.

FDS3680 : This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 5.2 A, 100 V. RDS(ON) = 0.043 Ω @ VGS = 10 V RDS(ON) = 0.048 Ω @ VGS = 6 V. • Low gate charge. • Fast switching speed • High performance trench technology for extremely low RDS(ON) . • High power and current handling capability. D D D D 5.

FDS3682 : FDS3682 September 2002 FDS3682 N-Channel PowerTrench® MOSFET 100V, 6A, 35mΩ Features • r DS(ON) = 30mΩ (Typ.), VGS = 10V, ID = 6A • Qg(tot) = 19nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • Optimized efficiency at high frequencies • UIS Capability (Single Pulse and Repetitive Pulse) Applications • DC/DC converters and Off-Line UPS • Distributed Power Architectures and VRMs • Primary Switch for 24V and 48V Systems • High Voltage Synchronous Rectifier • Direct Injection / Diesel Injection Systems • 42V Automotive Load Control Formerly developmental type 82755 • Electronic Valve Train Systems Branding Dash 5 5 4 3 2 1 6 7 1 2 3 4 8 MOSFET Maximum Ratings TA = 25°C .

FDS3690 : This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 5 A, 100 V. RDS(ON) = 0.059 Ω @ VGS = 10 V RDS(ON) = 0.066 Ω @ VGS = 6 V • Fast switching speed. • Low gate charge • High performance trench technology for extremely low RDS(ON) • High power and current handling capability. Applications • D.

FDS3692 : FDS3692 April 2013 FDS3692 N-Channel PowerTrench® MOSFET 100V, 4.5A, 60mΩ Features • rDS(ON) = 50mΩ (Typ.), VGS = 10V, ID = 4.5A • Qg(tot) = 11nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • Optimized efficiency at high frequencies • UIS Capability (Single Pulse and Repetitive Pulse) Formerly developmental type 82745 Applications • DC/DC converters and Off-Line UPS • Distributed Power Architectures and VRMs • Primary Switch for 24V and 48V Systems • High Voltage Synchronous Rectifier • Direct Injection / Diesel Injection Systems • 42V Automotive Load Control • Electronic Valve Train Systems Branding Dash 5 1 2 3 4 SO-8 MOSFET Maximum Ratings TA = 25°C unless otherwise .




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