July 1998
FDS8928A Dual N & P-Channel Enhancement Mode Field Effect
Transistor
General Description
These dual N- and P -Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
N-Channel 5.
5 A,30 V, RDS(ON)=0.
030 Ω @ VGS=4.
5 V RDS(ON)=0.
038 Ω @ VGS...