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FDS8928A

Fairchild Semiconductor
Part Number FDS8928A
Manufacturer Fairchild Semiconductor
Description Dual-Channel MOSFET
Published Mar 30, 2005
Detailed Description July 1998 FDS8928A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description These dual N- and P ...
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FDS8928A
FDS8928A

Overview
July 1998 FDS8928A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features N-Channel 5.
5 A,30 V, RDS(ON)=0.
030 Ω @ VGS=4.
5 V RDS(ON)=0.
038 Ω @ VGS=2.
5 V.
P-Channel -4 A,-20 V, RDS(ON)=0.
055 Ω @ VGS=-4.
5 V RDS(ON)=0.
072 Ω @ VGS=-2.
5 V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used surface mount package.
Dual (N & P-Channel) MOSFET in surface mount package.
SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 D1 D1 D2 5 6 7 4 3 2 1 S FD 8A 2 89 S2 G2 G1 8 SO-8 pin 1 S1 Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed PD T A = 25°C unless otherwise noted N-Channel 30 8 (Note 1a) P-Channel -20 -8 -4 -20 2 Units V V A 5.
5 20 Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) W 1.
6 1 0.
9 -55 to 150 °C TJ,TSTG Operating and Storage Temperature Range THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 °C/W °C/W © 1998 Fairchild Semiconductor Corporation FDS8928A Rev.
B Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Type Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA VGS = 0 V, ID = -250 µA ID = 250 µA, Referenced to 25 oC...


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