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Part Number
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FDW2506P |
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Manufacturer
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Fairchild Semiconductor |
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Description
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Dual P-Channel 2.5V Specified PowerTrench MOSFET |
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Published
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Mar 30, 2005 |
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Detailed Description
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FDW2506P
October 2000
FDW2506P
Dual P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2....
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Datasheet
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FDW2506P
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Overview
FDW2506P
October 2000
FDW2506P
Dual P-Channel 2.
5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.
5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process.
It has been optimized for power management applications with a wide range of gate drive voltage (2.
5V – 12V).
Features
• –5.
3 A, –20 V, RDS(ON) = 0.
022 Ω @ VGS = –4.
5 V.
RDS(ON) = 0.
033 Ω @ VGS = –2.
5V.
• Extended VGSS range (±12V) for battery applications • Low gate charge • High performance trench technology for extremely low RDS(ON) • Low profile TSSOP-8 package
Applications
• Load switch • Motor drive • DC/DC conversion • Power management
G2 S2 S2 D2 G1 S1 S1 D1...
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