DatasheetsPDF.com

FDW2507NZ

Fairchild Semiconductor
Part Number FDW2507NZ
Manufacturer Fairchild Semiconductor
Description Common Drain N-Channel 2.5V specified PowerTrench MOSFET
Published Mar 30, 2005
Detailed Description FDW2507NZ March 2003 FDW2507NZ Common Drain N-Channel 2.5V specified PowerTrench MOSFET General Description This mono...
Datasheet PDF File FDW2507NZ PDF File

FDW2507NZ
FDW2507NZ

Overview
FDW2507NZ March 2003 FDW2507NZ Common Drain N-Channel 2.
5V specified PowerTrench MOSFET General Description This monolithic common drain N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS(ON) @ VGS = 2.
5v on special TSSOP-8 lead frame with all the drains on one side of the package.
Features • 7.
5 A, 20 V RDS(ON) = 19 mΩ @ VGS = 4.
5 V RDS(ON) = 23 mΩ @ VGS = 2.
5 V • Isolated source and drain pins • ESD protection diode (note 3) • High performance trench technology for extremely low RDS(ON) @ VGS = 2.
5 V • Low profile TSSOP-8 package Applications • Li-Ion Battery Pack D D D D G2 S2 G1 S1 Pin 1 1 2 3 4 8 7 6 5 TSSOP-8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 20 ±12 (Note 1a) Units V V A W °C 7.
5 30 1.
6 1.
1 –55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 77 114 °C/W °C/W Package Marking and Ordering Information Device Marking 2507NZ Device FDW2507NZ Reel Size 13’’ Tape width 12mm Quantity 3000 units 2003 Fairchild Semiconductor Corporation FDW2507NZ Rev C2 FDW2507NZ Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 µA Min 20 Typ Max Units V Off Characteristics ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = 12 V, VGS = –12 V, VGS = 0 V VDS = 0 V VDS = 0 V –13 1 10 –10 mV/°C µA µA µA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)