FDW2508P December 2001 FDW2508P Dual P-Channel 1.
8 V Specified PowerTrench MOSFET General Description This P-Channel –1.
8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management applications.
Features • –6 A, –12 V.
RDS(ON) = 18 mΩ @ VGS = –4.
5 V RDS(ON) = 22 mΩ @ VGS = –2.
5 V RDS(ON) = 30 mΩ @ VGS = –1.
8 V Low gate charge(26nC typical) High performance trench technology for extremely low RDS(ON) Low profile TSSOP-8 package Applications • • • Power management Load switch Battery protection • • • G2 S2 S2 D2 G1 S1 S1 D1 Pin 1 1 2 3 4 8 7 6 5 TSSOP-8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drai...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)