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Part Number
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FDW258P |
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Manufacturer
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Fairchild Semiconductor |
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Description
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P-Channel 1.8V Specified PowerTrench MOSFET |
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Published
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Mar 30, 2005 |
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Detailed Description
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FDW258P
January 2002
FDW258P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V spec...
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Datasheet
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FDW258P
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Overview
FDW258P
January 2002
FDW258P
P-Channel 1.
8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.
8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.
It has been optimized for power management applications with a wide range of gate drive voltage (1.
8V – 8V).
Features
• –9 A, –12 V.
RDS(ON) = 11 mΩ @ VGS = –4.
5 V RDS(ON) = 14 mΩ @ VGS = –2.
5 V RDS(ON) = 20 mΩ @ VGS = –1.
8 V
Applications
• Load switch • Motor drive • DC/DC conversion • Power management
• Rds ratings for use with 1.
8 V logic • Low gate charge • High performance trench technology for extremely low RDS(ON) • Low profile TSSOP-8 package
D S S D G S S D
Pin 1
5...
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