Part Number
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FDW262P |
Manufacturer
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Fairchild Semiconductor |
Description
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20V P-Channel PowerTrench MOSFET |
Published
|
Mar 30, 2005 |
Detailed Description
|
FDW262P
June 2001
FDW262P
20V P-Channel PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET i...
|
Datasheet
|
FDW262P
|
Overview
FDW262P
June 2001
FDW262P
20V P-Channel PowerTrench MOSFET
General Description
This P-Channel 1.
8V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features
• –4.
5 A, –20 V.
RDS(ON) = 47 mΩ @ VGS = –4.
5 V RDS(ON) = 65 mΩ @ VGS = –2.
5 V RDS(ON) = 100 mΩ @ VGS = –1.
8 V • RDS(ON) rated for use with 1.
8 V logic • Low gate charge (13nC typical) • High performance trench technology for extremely low RDS(ON) • Low profile TSSOP-8 package
Applications
• Power management • Load switch
D S S D G S S D
5 6 7 8
4 3 2 1...
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