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FDW262P

Fairchild Semiconductor
Part Number FDW262P
Manufacturer Fairchild Semiconductor
Description 20V P-Channel PowerTrench MOSFET
Published Mar 30, 2005
Detailed Description FDW262P June 2001 FDW262P 20V P-Channel PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET i...
Datasheet PDF File FDW262P PDF File

FDW262P
FDW262P

Overview
FDW262P June 2001 FDW262P 20V P-Channel PowerTrench MOSFET General Description This P-Channel 1.
8V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features • –4.
5 A, –20 V.
RDS(ON) = 47 mΩ @ VGS = –4.
5 V RDS(ON) = 65 mΩ @ VGS = –2.
5 V RDS(ON) = 100 mΩ @ VGS = –1.
8 V • RDS(ON) rated for use with 1.
8 V logic • Low gate charge (13nC typical) • High performance trench technology for extremely low RDS(ON) • Low profile TSSOP-8 package Applications • Power management • Load switch D S S D G S S D 5 6 7 8 4 3 2 1...


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