PRELIMINARY DATA SHEET
FP750SOT343
PACKAGED LOW NOISE, MEDIUM POWER PHEMT • FEATURES ♦ 0.
5 dB Noise Figure at 2 GHz ♦ 21 dBm P-1dB 2 GHz ♦ 17 dB Power Gain at 2 GHz ♦ 33 dBm IP3 at 2 GHz ♦ 45% Power-Added-Efficiency
•
DESCRIPTION AND APPLICATIONS The FP750SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility
transistor (pHEMT) intended for applications requiring low noise figure, medium output power and/or high dynamic range.
It utilizes a 0.
25 µm x 750 µm
Schottky barrier gate, defined by electron-beam photolithography.
The FP750’s active areas are passivated with Si3N4, and the SOT343 (also known as SC-70) package is ideal for low-cost, high-performance applica...