DatasheetsPDF.com

FP750SOT343

Filtronic Compound Semiconductors
Part Number FP750SOT343
Manufacturer Filtronic Compound Semiconductors
Description PACKAGED LOW NOISE/ MEDIUM POWER PHEMT
Published Apr 1, 2005
Detailed Description PRELIMINARY DATA SHEET FP750SOT343 PACKAGED LOW NOISE, MEDIUM POWER PHEMT • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ ...
Datasheet PDF File FP750SOT343 PDF File

FP750SOT343
FP750SOT343

Overview
PRELIMINARY DATA SHEET FP750SOT343 PACKAGED LOW NOISE, MEDIUM POWER PHEMT • FEATURES ♦ 0.
5 dB Noise Figure at 2 GHz ♦ 21 dBm P-1dB 2 GHz ♦ 17 dB Power Gain at 2 GHz ♦ 33 dBm IP3 at 2 GHz ♦ 45% Power-Added-Efficiency • DESCRIPTION AND APPLICATIONS The FP750SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring low noise figure, medium output power and/or high dynamic range.
It utilizes a 0.
25 µm x 750 µm Schottky barrier gate, defined by electron-beam photolithography.
The FP750’s active areas are passivated with Si3N4, and the SOT343 (also known as SC-70) package is ideal for low-cost, high-performance applications that require a surface-mount package.
The FP750SOT343 is designed for commercial systems for use in low noise amplifiers and oscillators operating over the RF and Microwave frequency ranges.
The low noise figure makes it appropriate for use in receivers in WLL/RLL, WLAN, and GPS.
This device is also suitable for PCS and GSM base station front-ends.
• ELECTRICAL SPECIFICATIONS @ TAmbient = 25°C Parameter Saturated Drain-Source Current Power at 1-dB Compression Power Gain at 1-dB Compression Power-Added Efficiency Noise Figure Symbol IDSS P-1dB G-1dB PAE NF Test Conditions VDS = 2 V; VGS = 0 V f=2GHz; VDS = 3.
3 V; IDS = 110mA f=2GHz; VDS = 3.
3 V; IDS = 110mA f=2GHz; VDS = 3.
3 V; IDS = 110mA; POUT = 21 dBm f=2GHz; VDS = 3.
3V; 40mA f=2GHz; VDS = 3.
3V; IDS = 60mA f=2GHz; VDS = 3.
3V; 110mA VDS = 3.
3V; IDS = 110mA VDS = 2 V; VGS = 0 V VGS = -5 V VDS = 2 V; IDS = 2 mA IGS = 2 mA IGD = 2 mA Min 180 20 16 Typ 220 21 17 45 0.
4 0.
5 0.
7 33 220 5 -1.
2 12 13 Max 265 Units mA dBm dB % dB dB dB dBm mS µA V V V Output Third-Order Intercept Point Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Magnitude Gate-Drain Breakdown Voltage Magnitude IP3 GM IGSO VP |VBDGS| |VBDGD| 170 35 10 10 Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.
f...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)