FPN630 / FPN630A
FPN630 FPN630A
C
TO-226
B E
PNP Low Saturation
Transistor
These devices are designed for high current gain and low saturation voltage with collector currents up to 3.
0 A continuous.
Sourced from Process PC.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage
TA = 25°C unless otherwise noted
Parameter
Value
30 35 5.
0 3.
0 -55 to +150
Units
V V V A °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junct...