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FPN630

Fairchild Semiconductor
Part Number FPN630
Manufacturer Fairchild Semiconductor
Description PNP Low Saturation Transistor
Published Apr 1, 2005
Detailed Description FPN630 / FPN630A FPN630 FPN630A C TO-226 B E PNP Low Saturation Transistor These devices are designed for high curre...
Datasheet PDF File FPN630 PDF File

FPN630
FPN630

Overview
FPN630 / FPN630A FPN630 FPN630A C TO-226 B E PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.
0 A continuous.
Sourced from Process PC.
Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage TA = 25°C unless otherwise noted Parameter Value 30 35 5.
0 3.
0 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C u...


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