FQA38N30 — N-Channel QFET® MOSFET
FQA38N30
N-Channel QFET® MOSFET
300 V, 38.
4 A, 85 mΩ
Features
• 38.
4 A, 300 V, RDS(on) = 85 mΩ (Max.
) @ VGS = 10 V, ID = 19.
2 A
• Low Gate Charge (Typ.
90 nC) • Low Crss (Typ.
70 pF) • 100% Avalanche Tested • RoHS compliant
August 2014
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply, po...