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FQA38N30

Fairchild Semiconductor
Part Number FQA38N30
Manufacturer Fairchild Semiconductor
Description 300V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQA38N30 — N-Channel QFET® MOSFET FQA38N30 N-Channel QFET® MOSFET 300 V, 38.4 A, 85 mΩ Features • 38.4 A, 300 V, RDS(on...
Datasheet PDF File FQA38N30 PDF File

FQA38N30
FQA38N30


Overview
FQA38N30 — N-Channel QFET® MOSFET FQA38N30 N-Channel QFET® MOSFET 300 V, 38.
4 A, 85 mΩ Features • 38.
4 A, 300 V, RDS(on) = 85 mΩ (Max.
) @ VGS = 10 V, ID = 19.
2 A • Low Gate Charge (Typ.
90 nC) • Low Crss (Typ.
70 pF) • 100% Avalanche Tested • RoHS compliant August 2014 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
D G DS TO-3PN Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - ...


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