Part Number
|
FQD2N60C |
Manufacturer
|
Fairchild Semiconductor |
Description
|
600V N-Channel MOSFET |
Published
|
Apr 1, 2005 |
Detailed Description
|
FQD2N60C / FQU2N60C N-Channel QFET® MOSFET
April 2013
FQD2N60C / FQU2N60C
600 V, 1.9 A, 4.7 Ω Features
• 1.9 A, 600 V,...
|
Datasheet
|
FQD2N60C
|
Overview
FQD2N60C / FQU2N60C N-Channel QFET® MOSFET
April 2013
FQD2N60C / FQU2N60C
600 V, 1.
9 A, 4.
7 Ω Features
• 1.
9 A, 600 V, RDS(on) = 4.
7 Ω (Max.
) @ VGS = 10 V, ID = 0.
95 A • Low Gate Charge (Typ.
8.
5 nC) • Low Crss (Typ.
4.
3 pF) • 100% Avalanche Tested • RoHS Compliant
N-Channel QFET® MOSFET
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor corr...
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