DatasheetsPDF.com

FQD2N60C

Fairchild Semiconductor
Part Number FQD2N60C
Manufacturer Fairchild Semiconductor
Description 600V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQD2N60C / FQU2N60C N-Channel QFET® MOSFET April 2013 FQD2N60C / FQU2N60C 600 V, 1.9 A, 4.7 Ω Features • 1.9 A, 600 V,...
Datasheet PDF File FQD2N60C PDF File

FQD2N60C
FQD2N60C

Overview
FQD2N60C / FQU2N60C N-Channel QFET® MOSFET April 2013 FQD2N60C / FQU2N60C 600 V, 1.
9 A, 4.
7 Ω Features • 1.
9 A, 600 V, RDS(on) = 4.
7 Ω (Max.
) @ VGS = 10 V, ID = 0.
95 A • Low Gate Charge (Typ.
8.
5 nC) • Low Crss (Typ.
4.
3 pF) • 100% Avalanche Tested • RoHS Compliant N-Channel QFET® MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
D G S G D D ! ● S ◀ G! ▲ ● ● D-PAK I-PAK ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) Parameter FQD2N60C / FQU2N60C 600 1.
9 1.
14 7.
6 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Unit V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C)* Power Dissipation (TC = 25°C) - Derate above 25°C 120 1.
9 4.
4 4.
5 2.
5 44 0.
35 -55 to +150 300 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient, Max.
FQD2N60C / FQU2N60C 2.
87 50 110 Unit °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2009 Fairchild Semiconductor Corporation FQD2N60C / FQU2N60C Rev.
C0 1 www.
fairchildsemi.
com Free Datasheet http://www.
datasheet4u.
com/ FQD2N60C / FQU2N60C N-Channel QFET® MOSFET Pack...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)