FQP4N20L — N-Channel QFET® MOSFET
FQP4N20L
N-Channel QFET® MOSFET
200 V, 3.
8 A, 1.
35 Ω
October 2013
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes.
These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control.
Features
• 3.
8 A, 200 V, RDS(on) = 1.
35 Ω (Max.
) @ VGS = 10 V, ID = 1.
9 A • Low Gate Charge (Typ.
4.
0 nC) • Low Crss (Typ.
6.
0...