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FQP4N20L

Fairchild Semiconductor
Part Number FQP4N20L
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQP4N20L — N-Channel QFET® MOSFET FQP4N20L N-Channel QFET® MOSFET 200 V, 3.8 A, 1.35 Ω October 2013 Description These...
Datasheet PDF File FQP4N20L PDF File

FQP4N20L
FQP4N20L

Overview
FQP4N20L — N-Channel QFET® MOSFET FQP4N20L N-Channel QFET® MOSFET 200 V, 3.
8 A, 1.
35 Ω October 2013 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes.
These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control.
Features • 3.
8 A, 200 V, RDS(on) = 1.
35 Ω (Max.
) @ VGS = 10 V, ID = 1.
9 A • Low Gate Charge (Typ.
4.
0 nC) • Low Crss (Typ.
6.
0 pF) • 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Singl...


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